? semiconductor components industries, llc, 2011 october, 2011 ? rev. 9 1 publication order number: 2n6107/d pnp - 2n6107, 2n6109, 2n6111; npn - 2n6288, 2n6292 complementary silicon plastic power transistors these devices are designed for use in general ? purpose amplifier and switching applications. features ? dc current gain specified to 7.0 amperes h fe = 30 ? 150 @ i c = 3.0 adc ? 2n6111, 2n6288 = 2.3 (min) @ i c = 7.0 adc ? all devices ? collector ? emitter sustaining voltage ? v ceo(sus) = 30 vdc (min) ? 2n6111, 2n6288 = 50 vdc (min) ? 2n6109 = 70 vdc (min) ? 2n6107, 2n6292 ? high current gain ? bandwidth product f t = 4.0 mhz (min) @ i c = 500 madc ? 2n6288, 90, 92 = 10 mhz (min) @ i c = 500 madc ? 2n6107, 09, 11 ? to ? 220ab compact package ? pb ? free packages are available* maximum ratings (note 1) rating symbol value unit collector ? emitter voltage 2n6111, 2n6288 2n6109 2n6107, 2n6292 v ceo 30 50 70 vdc collector ? base voltage 2n6111, 2n6288 2n6109 2n6107, 2n6292 v cb 40 60 80 vdc emitter ? base voltage v eb 5.0 vdc collector current ? continuous ? peak i c 7.0 10 adc base current i b 3.0 adc total power dissipation @ t c = 25 c derate above 25 c p d 40 0.32 w w/ c operating and storage junction temperature range t j , t stg ? 65 to +150 c thermal characteristics characteristics symbol max unit thermal resistance, junction ? to ? case r jc 3.125 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. indicates jedec registered data. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 7 ampere power transistors complementary silicon 30 ? 50 ? 70 volts, 40 watts to ? 220ab case 221a style 1 1 2 3 4 http://onsemi.com marking diagram 2n6xxxg ayww 2n6xxx = specific device code xxx = see table on page 4 g = pb ? free package a = assembly location y = year ww = work week see detailed ordering, marking, and shipping information in the package dimensions section on page 4 of this data sheet. ordering information pin 1. base 2. collector 3. emitter 4. collector
pnp ? 2n6107, 2n6109, 2n6111; npn ? 2n6288, 2n6292 http://onsemi.com 2 40 0 0 20 40 60 80 100 120 160 figure 1. power derating t c , case temperature ( c) p d , power dissipation (watts) 20 30 140 10 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) (note 2) ?????????????????????? ?????????????????????? characteristic ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? collector ? emitter sustaining voltage (note 3) (i c = 100 madc, i b = 0) 2n6111, 2n6288 2n6109 2n6107, 2n6292 ????? ????? ????? ????? ??? ??? ??? ??? ???? ???? ???? ???? ? ? ? ??? ??? ??? ??? vdc ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ????? ??? ??? ??? ??? ? ? ? ???? ???? ???? ???? 1.0 1.0 1.0 ??? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? c) 2n6111, 2n6288 (v ce = 50 vdc, v eb(off) = 1.5 vdc, t c = 150 c) 2n6109 (v ce = 70 vdc, v eb(off) = 1.5 vdc, t c = 150 c) 2n6107, 2n6292 ????? ????? ????? ????? ????? ??? ??? ??? ??? ??? ? ? ? ? ? ? ???? ???? ???? ???? ???? 100 100 100 2.0 2.0 2.0 ??? ??? ??? ??? ??? adc madc ?????????????????????? ?????????????????????? ????? ????? ??? ??? ? ???? ???? 1.0 ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics (note 3) ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ????? ????? ??? ??? ??? ??? ??? ???? ???? ???? ???? ???? ? ??? ??? ??? ??? ??? ?????????????????????? ?????????????????????? collector ? emitter saturation voltage (i c = 7.0 adc, i b = 3.0 adc) ????? ????? ??? ??? ? ???? ???? 3.5 ??? ??? ?????????????????????? ?????????????????????? ? emitter on voltage (i c = 7.0 adc, v ce = 4.0 vdc) ????? ????? ??? ??? ? ???? ???? 3.0 ??? ??? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? current gain ? bandwidth product (note 4) (i c = 500 madc, v ce = 4.0 vdc, f test = 1.0 mhz) 2n6288, 92 2n6107, 09, 11 ????? ????? ????? ????? ??? ??? ??? ??? ???? ???? ???? ???? ? ? ??? ??? ??? ??? mhz ?????????????????????? ?????????????????????? ????? ????? ??? ??? ? ???? ???? 250 ??? ??? ?????????????????????? ?????????????????????? ? signal current gain (i c = 0.5 adc, v ce = 4.0 vdc, f = 50 khz) ????? ????? ??? ??? ???? ???? ? ??? ??? 2. indicates jedec registered data. 3. pulse test: pulse width 300 s, duty cycle 2.0%. 4. f t = |h fe | ? f test
pnp ? 2n6107, 2n6109, 2n6111; npn ? 2n6288, 2n6292 http://onsemi.com 3 figure 2. switching time test circuit +11 v 25 s 0 -9.0 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1.0% 51 d1 must be fast recovery type, eg: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma r b and r c are varied to obtain desired current levels 2.0 0.07 figure 3. turn ? on time i c , collector current (amp) 1.0 0.7 0.5 0.3 0.2 0.1 0.02 0.1 0.2 0.3 0.5 2.0 3.0 7.0 t j = 25 c v cc = 30 v i c /i b = 10 0.05 t, time (s) t r 1.0 5.0 t d @ v be(off) 5.0 v 0.07 0.03 figure 4. thermal response t, time (ms) 1.0 0.01 0.01 0.5 0.2 0.1 0.05 0.02 r(t), transient thermal resistance (normalized) 0.05 1.0 2.0 5.0 10 20 50 100 200 1.0 k 500 z jc(t) = r(t) r jc r jc = 3.125 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 0.02 0.01 single pulse 0.1 0.7 0.3 0.07 0.03 0.02 0.1 0.5 0.2
pnp ? 2n6107, 2n6109, 2n6111; npn ? 2n6288, 2n6292 http://onsemi.com 4 15 1.0 figure 5. active ? region safe operating area v ce , collector-emitter voltage (volts) 10 7.0 5.0 2.0 0.15 5.0 10 current limit secondary breakdown limit thermal limit @ t c = 25 c (single pulse) 7.0 i c , co lle c t o r c urrent (amp s ) dc 0.1 ms 1.0 0.5 0.2 0.3 2.0 3.0 0.5 ms 20 30 50 70 100 3.0 0.7 0.1 ms 5.0 ms there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 300 0.5 v r , reverse voltage (volts) 30 3.0 5.0 50 1.0 2.0 c, capacitance (pf) 200 70 50 t j = 25 c c ib 100 figure 6. turn ? off time 10 20 30 5.0 0.07 figure 7. capacitance i c , collector current (amp) 3.0 2.0 1.0 0.7 0.5 0.3 0.05 0.1 0.2 0.3 0.5 2.0 3.0 7.0 t j = 25 c v cc = 30 v i c /i b = 10 i b1 = i b2 0.1 t, time (s) t r 1.0 5.0 0.2 0.07 t s c ob ordering information device device marking package shipping 2n6107 2n6107 to ? 220ab 50 units / rail 2N6107G to ? 220ab (pb ? free) 2n6109 2n6109 to ? 220ab 50 units / rail 2n6109g to ? 220ab (pb ? free) 2n6111 2n6111 to ? 220ab 50 units / rail 2n6111g to ? 220ab (pb ? free) 2n6288 2n6288 to ? 220ab 50 units / rail 2n6288g to ? 220ab (pb ? free) 2n6292 2n6292 to ? 220ab 50 units / rail 2n6292g to ? 220ab (pb ? free)
pnp ? 2n6107, 2n6109, 2n6111; npn ? 2n6288, 2n6292 http://onsemi.com 5 package dimensions to ? 220 case 221a ? 09 issue ag notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.036 0.64 0.91 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. 2n6107/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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